PACS: 71.25.Rk, 81.60.Cp

Electroreflectance spectroscopy and scanning electron microscopy study of microrelief silicon wafers with various surface pretreatments

T. Ya. Gorbach, R. Yu. Holiney, I. M. Matiyuk, L. A. Matveeva, S. V. Svechnikov, E. F. Venger

Institute of Semiconductor Physics, NAS Ukraine, 45 prospekt Nauki, Kyiv, 252028, Ukraine

Phone: (38044) 265-83-17, Fax (38044) 265-83-42, E-mail: matveeva@semicond.kiev.ua

Abstract. The effect of various pretreatments on the performance of microrelief (textured) Si wafers was studied by the techniques of low-field electroreflectance spectroscopy, scanning electron microscopy, and electron diffraction. Four types of preliminary treatments were employed to prepare microrelief surfaces by anisotropic chemical etching: (i) cutting, (ii) cutting and mechanical polishing with Al2O3, (iii) cutting and chemical polishing with HNO3:HF, and (iv) the standard industrial technique. Using the critical point energy Eg at the central point in the Brillouin zone (G G transition) and the phenomenological parameter of broading G to characterize the performance of the Si surface, it was found that anisotropic chemical etching performed after cutting produced the surface performance comparable to that of industrially fabricated wafers, but at a lower cost.

Keywords: silicon, microrelief wafer, cutting pretreatment, critical point energy, broading parameter.

Paper received 25.09.98; revised manuscript received 19.10.98; accepted for publication 28.10.98.

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