PACS 61.72.V; 72.80.E

Crystallization kinetics of Ge22Sb22Te56 doped with Se and Ni

E. Garsia-Garsia
División de Estudios de Posgrado de la Facultad de Ingeniería, UAQ, Cerro de las Campanas s/n;
Centro Universitario , 76010, Queretaro, Qro, México

M. Yanez-Limon, Y. Vorobiev, F. Espinoza-Beltran, and J. Gonzalez-Hernandez
Centro de Investigación y de Estudios Avanzados del I.P.N., Unidad Querétaro, Facultad de Química,
Universidad Autonoma de Querétaro, Cerro de las Campanas s/n; Centro Universitario, 76010, Querétaro, Qro. México

Abstract. Effects of Ni and Se incorporation on the crystallization kinetics of Ge:Sb:Te alloys have been studied. Both elements were found to increase the stability of the amorphous structure. The kinetics of crystallization under isothermal treatments indicates that Ni reduces both the barrier for thermal crystallization and the crystallization rate. Crystallization of samples containing Se is also retarded, possibly due to a stronger bonding of this element in comparison with Te.

Keywords: crystallization kinetics, RF-sputtering technique, electrical conductivity.

Paper received 14.07.98; revised manuscript received 20.08.98; accepted for publication 27.10.98.

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