Semiconductor Physics, Quantum Electronics and Optoelectronics, 1 (1) P. 075-081 (1998).
References
1. L. A. Bovina, V. P. ÃÂshcheryakova, L. . lyukin, V.†I.†Stafeyev, FTP(Soviet Phys. - Semicond., in Russian),7(12),pp.†2301ñ2304 (1973)
2. A. I. Vlasenko, Œptoelectronics and semiconductor engineering(in Russian), 31, pp. 191ñ194 (1996)
3. O. Tufte, E. Stelzer, ́Growth and properties of epitaxial layerª,J. Appl. Phys., 40(11), pp. 4559-4568 (1969). https://doi.org/10.1063/1.1657232
4. V. Iovic, A. Vujanic, Z. Duric, ́Determination of the composition profiles of (Hg,Cd) Te epitaxial layersª,J. Serb. Chem.Soc., 59(9), pp. 645ñ653 (1994).
5. V. A. Rabinovich, Z. Ya. Khavin, Short chemical handbook(in Russian),Leningrad: Khimia Publ., (1978).
6. A. V. Novoselova, V. B. Lazarev et al. Physical-chemical properties of semiconductor materials (in Russian).Handbook, Ãoscow.: Nauka Publ., (1979).
7. I. V. Kurylo, ≤. Œ. Rudoy, Œ. ≤. Vlasenko (in Ukrainian), Ukr.Phys. J., 43(2), pp. 207-212 (1998).
8. A. Vlasenko, V. Babentsov, I. Rudoy, Z. Vlasenko, ́Advancedstudy of ISO VPE IR Photosensitive CdHgTe/CdxTe structureª, Proc. 20th International Conference on microelectronics (MIELí95), NIS, Serbia, 1, pp. 53ñ56 (1995).
9. W. Walukiewicz, ́Dislocation density reduction by isoelectronic impurities in semiconductorsª, Appl. Phys. Lett., (20), pp. 2009-2011 (1989). https://doi.org/10.1063/1.101198
10. P. Cheuvart, U. H. Hanani, D. Scheider, R. Tribulet, ́CdTe and CdZnTe crystal growth by horisontal Bridgman techniqueª, J. Crystal Growth.,101(1-4) pp. 270ñ274 (1990). https://doi.org/10.1016/0022-0248(90)90980-Y
11. A. I. Vlasenko, V. N. Babentsov, Z. . Vlasenko, S. V. Svechnikov et al., FTP(Soviet Phys. ñ Semicond., in Russian),31(8),p.p. 1017ñ1020 (1997). https://doi.org/10.1134/1.1187243
12. A. I. Vlasenko, Yu. N. Gavrilyuk, A. V. Lyubchenko, Ye. A. Salkov, FTP(Soviet Phys. ñ Semicond., in Russian), 13(11),p.p.†2180ñ2185 (1979).
13. G. B. ¿bdullayev, ". D. Dzhafarov, atomic diffusion in semiconductor structures (in Russian), Ãoscow: ¿tomizdat Publ.,(1980).
14. V. N. Babentsov, Z. . Vlasenko, ¿. I. Vlasenko, A. V. Lyubchenko, FTP(Soviet Phys. ñ Semicond., in Russian),31(5),pp.†523ñ525 (1997).
15. S.B. Qadri, E.F. Skelton, A.W. Webb, J. Kennedy, ́The effect of Zn and Mn on Cd-Te bond strength in Cd1-xZnxTe (x†==0,04†±†0,01) and Cd1-xMnxTe (x†=†0,1†±†0,005)ª, Physica,139-140B(1), pp. 341ñ342 (1986). https://doi.org/10.1016/0378-4363(86)90593-0
16. S. V. ‡vertsev, A. Ye. Belyayev, FTP(Soviet Phys. ñ Semicond.,in Russian),31(3), p.p. 342ñ346 (1997).
17. L. P. Shcherbak, Œptoelectronics and semicondactor engineering(in Russian), 31, p. 39ñ44 (1996).
18. K. Ohba, Y. Hiratate, T.Taguchi, A.Hiraki, ́Photoluminescence of CdTe crystals annealed in Hgª, Nuclear Instrum. and Methods in Phys. Res. A283(2), pp. 265-267 (1989). https://doi.org/10.1016/0168-9002(89)91369-7
19. A. Lusson, R. Legros, Y. Marfaing, H. Mariette, ́Excitonic luminescence and exciton localization in alloysª, Proc. 19th Int.Conf. On Phys. Of Semicond., Warsaw, Poland, 2, pp. 1319-1322 (1988).
20. V. Babentsov, S.Gorban, G. Zhovnir, L.Rashkovetskii, ́Behavior of accidental Li impurities in high-resistivity cadmium telluride subjected to brief annealingª, Sov. Phys. Semicond., 25(4),pp.†456ñ458 (1991).
21. N. P. Gavaleshko, P. N. Garley, V. A. Shenderovsky, Narrow-gap semiconductors: production and physical properties(in Russian), yiv: Nauk. Dumka Publ., (1984).
22. A. I. Vlasenko, Z. . Vlasenko, ¿. V. Lyubchenko, FTP(Soviet Phys. ñ Semicond., in Russian),31(11), p.p. 1323ñ1326 (1997).
23. N.N. Berchenko, V.Ye. revs, V.G. Sredin. Semiconductor solid alloys and their applications (in Russian), Ãoscow: Voyenizdat Publ., (1982).
24. G.P. Peka, F.V. Óvalenko, ¿.I. Smolyar, Ch. 2 ́Œptical properties of graded band-gap semiconductorsª in Graded band-gap semiconductrors, pp. 36-37, yiv: Vyshcha Shkola Publ., p.†252(1989).