References

Semiconductor Physics, Quantum Electronics and Optoelectronics, 1 (1) P. 101-107 (1998).

References

1. J. P. Colinge, in Silicon-On-Insulator Technolgy: Materials to VLSI, Chapt. 7, pp.185-188, Kluwer Academic Publishers (1991).

2. P. Francis, A. Terao, B. Gentinne, D. Flandre, and J. P. Colinge, in IEDM Tech. Dig. 353, (1992).

3. J. P. Eggermont, B. Gentinne, and D. Flandre, in Proc. 2nd Int. High Temperature Electron. Conf. p.21 (1994).

4. J. P. Eggermont, D. De Ceuster, D. Flandre, P. Gentinne, P. J. A. Jespers, and J. P. Colinge, IEEE J. Solid-State Circuits,31, 179, (1996). https://doi.org/10.1109/4.487994

5. G. Reichert, C. Baynaud, O. Faynot, F. Balestra, and S. Cristoloveanu, Microelectronic Engineering, 36, 359 (1997). https://doi.org/10.1016/S0167-9317(97)00079-8

6. E. Givargizov, V. Voulin, and A. Limanov, in Physical and Technical Problems of SOI Structures and Devices, pp.27-38, Kluwer Academic Publishers (1995). https://doi.org/10.1007/978-94-011-0109-7_3

7. T. Elewa, F. Balestra, S. Cristoloveanu, I. Hafez, J. P. Colinge, A. Auberton-Herve, J. Davis, IEEE Trans. on El. Dev., ED-17,1007 (1990). https://doi.org/10.1109/16.52436

8. H. K. Lim and J. G. Fossum, IEEE Trans. on El. Dev., ED-30,1244 (1983). https://doi.org/10.1109/T-ED.1983.21282

9. D. J. Wouters, J. P. Colinge, and H. E. Maes, IEEE Trans. on Electron Dev., ED-37, 2022 (1990). https://doi.org/10.1109/16.57165

10. T. E. Rudenko, V. I. Kilchitskaya, and A. N. Rudenko, Microelectronic Engineering, 36, 367 (1997). https://doi.org/10.1016/S0167-9317(97)00081-6

11. Т.Е. Руденко, А.Н. Руденко, В.С. Лысенко, А.Б. Лиманов, Е.И. Гиваргизов, Электронная промышленность 1, 36(1992).