Editor-in-chief

V. F. Machulin
V.Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv

Deputy editors-in-chief

A. Ye. Belyaev
V.Lashkaryov Institute of Semiconductor Physics, NASU , Kyiv
V. P. Kladko
V.Lashkaryov Institute of Semiconductor Physics, NASU , Kyiv
V. A. Kochelap
V.Lashkaryov Institute of Semiconductor Physics, NASU , Kyiv

I. V. Blonskii
Institute of Physics NASU, Kyiv, Ukraine
N. L. Dmitruk
V.Lashkaryov Institute of Semiconductor Physics NASU, Kyiv, Ukraine
V. M. Dobrovolskyi
T. G. Shevchenko National University, Kyiv, Ukraine
I. Z. Indutnyy
V.Lashkaryov Institute of Semiconductor Physics NASU, Kyiv, Ukraine
V. I. Grygoruk
T. G. Shevchenko National University, Kyiv, Ukraine
R.V. Konakova
V.Lashkaryov Institute of Semiconductor Physics NASU, Kyiv, Ukraine
V. G. Litovchenko
V.Lashkaryov Institute of Semiconductor Physics NASU, Kyiv, Ukraine
V. S. Lysenko
V.Lashkaryov I nstitute of Semiconductor Physics NASU, Kyiv, Ukraine
M. P. Lisitsa
V.Lashkaryov Institute of Semiconductor Physics NASU, Kyiv, Ukraine
P. F. Oleksenko
V.Lashkaryov Institute of Semiconductor Physics, NASU, Kyiv, Ukraine
V. V. Petrov
Institute of Information Recording Problems, NASU, Kyiv, Ukraine

Executive secretary

A. A. Kudryavtsev
V.Lashkaryov Institute of Semiconductor Physics,
NASU , Kyiv

International advisory counsil

H. Arsenault
University Laval COPL, Quebec, Canada
M. S. Brodyn
Institute of Physics, NASU, Kyiv, Ukraine
J.-P. Colinge
University of California, Davis, USA
A. N. Georgobiani
P. N. Lebedev Physical Institute, RAS, Moscow, Russia
P. L. F. Hemment
University of Surrey, UK
E. Ivchenko
A. F. Ioffe Physical and Technical Institute,
RAS, St-Petersburg, Russia
H. Luth
Institut fur Schicht und Ionentechnik,
Julich, Germany
V. V. Mitin
Wayne State University, Detroit, USA

I. V. Prokopenko
V.Lashkaryov Institute of Semiconductor Physics NASU, Kyiv, Ukraine
A. G. Naumovets
Institute of Physics NASU, Kyiv, Ukraine
O. G. Sarbei
Institute of Physics, NASU, Kyiv, Ukraine
F. F. Sizov
V.Lashkaryov Institute of Semiconductor Physics, NASU, Kyiv, Ukraine
S. V. Svechnikov
V.Lashkaryov Institute of Semiconductor Physics, NASU, Kyiv, Ukraine
P. M. Tomchuk
Institute of Physics, NASU, Kyiv, Ukraine
O. V. Tretyak
T. G. Shevchenko National University, Kyiv, Ukraine
M. Ya. Valakh
V.Lashkaryov Institute of Semiconductor Physics, NASU, Kyiv, Ukraine
O. I. Vlasenko
V.Lashkaryov Institute of Semiconductor Physics NASU, Kyiv, Ukraine
Yu. I. Yakimenko
National Technical University "KPI" , Kyiv, Ukraine
V. M. Yakovenko
Institute of Radioelectronics NASU, Kharkiv, Ukraine

Managing editor

S. O. Kostyukevych
V.Lashkaryov Institute of Semiconductor Physics, NASU , Kyiv

J. B. Morante
University of Barcelona, Spain
N. G. Nakhodkin
T. G. Shevchenko National University , Kyiv, Ukraine
F. A. Kuznetsov
Nikolaev Institute of Inorganic Chemistry SB of RAS, Novosibirsk, Russia
J. B. Renucci
Universite Paul Sabatier, Toulouse, France
M. S. Soskin
Institute of Physics, NASU, Kyiv, Ukraine
M. A. Stroscio
US Army Research Office,
Research Triangle Park, USA
E. A. Vinogradov
RAS Institute of Spectroscopy, Troitsk, Russia