PACS 61.72T; 66.30L; 61.72

Ultrasound effect on radiation damages in boron implanted silicon

B. Romanjuk, D. Krüger*, V. Melnik, V. Popov, Ya. Olikh, V. Soroka**, O. Oberemok

Institute of Semiconductor Physics of NASU, 45, prospect Nauki, 03028, Kyiv, Ukraine. Tel/Fax: (38044)265-5724.
E-mail: romb@isp.kiev.ua.
*Institute for Semiconductor Physics, W. - Korsing - Str. 2, 15230 Frankfurt (Oder), Germany. Tel.: (49335)5625-326.
Fax,: (49335)5625-300

Abstract. The radiation defect distribution in boron implanted Si with and without ultrasound (US) treatment have been investigated. Obtained results have shown the significant influence of the in situ US treatment on the defect formation. The defect concentration decreases both in the as-implanted and post-annealed samples, implanted with US-treatment. The physical model of this effect, connecting it with stimulated diffusion of silicon interstitials under the US treatment have been proposed.

Keywords: ion implantation, silicon, Rutherford backscattering spectroscopy, p-n junction, boron, microelectronics, radiation defects, diffusion.

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