PACS 68.65, 81.05. E, 81.15. L
AFM study of micromorphology and microscopic growth mechanisms of Hg1-x CdxTe LPE epitaxial layers
G.V. Beketov, L.V. Rashkovetskiy, O.V. Rengevych, G.I. Zhovnir
Institute of Semiconductor Physics, NAS of Ukraine, 45, Prospect Nauki, 03028, Kyiv, Ukraine
Abstract. Mercury cadmium telluride epitaxial layers exhibiting large areas with nearly atomically-flat surface were grown using liquid phase epitaxy (LPE) from Te-rich solution in closed system. Evolution of surface morphology during different steps of LPE growth was studied using scanning probe microscopy. Various growth features including monomolecular steps were observed. Both scanning probe microscopy (SPM) images and surface composition analysis with X-ray fluorescence spectroscopy clearly showed that vapor phase growth at the melt homogenization step contributed to epilayer formation and further evolution of its morphology.
Keywords: liquid phase epitaxy, scanning probe microscopy, surface morphology.