Semiconductor Physics, Quantum Electronics and Optoelectronics, 2 (3) P. 011-014 (2000).


References

1. C.S. Fuller, J.A. Ditzenberg, N.B. Hannay, E. Buehler // Phys.Rev., 96, 833 (1954).
https://doi.org/10.1103/PhysRev.96.1306
2. V.M. Babich, M.I. Bletskan, E.F. Venger. Oxygen in monocrystals of silicon, «Naukova Dumka», Kyiv, p. 239,(1997).
3. L.I. Murin, V.P. Markevich, in Proc. Int. Conf. on Science and Technology of Defect Control in Semiconductors, Ed. K.Sumino (North-Holland, Amsterdam, 1990) p. 190.
4. W. Kaizer, H. Frisch, H. Reiss // Phys.Rev., 112, p. 1546(1958).
https://doi.org/10.1103/PhysRev.112.1546
5. O.M. Kabaldin, V.B. Neimash, V.M. Tsmots', V.C. Shtym // Ukrainian Phys. Journ., 40, p. 218 (1995).
6. O.M. Kabaldin, V.B. Neimash, V.M.Tsmots', V.I. Shakhovtsov, A.V. Batunina, V.V. Voronkov, G.I. Voronkova, V.P.Kalinushkin // Ukrainian Phys. Journ., 38, p. 34 (1993).
7. O.M. Kabaldin, V.B. Neimash, V.M. Tsmots', L.I. Shpinar // Ukrainian Phys. Journ., 40, p. 1079 (1995).
8. N.T. Bagraev, N.A. Vitovskii, L.S. Vlasenko, T.V. Mashovets // Fiz. Tekh. Poluprov., 17, p. 1979 (1983).
9. D.I. Brinkevich, V.P. Markevich, L.I. Murin, V.V. Petrov // Fiz. Tekh. Poluprov., 26, p. 682 (1992).
10.V.P. Markevich, L.I Murin // Phys. Stat. Solidi., A111, K149(1989).
https://doi.org/10.1002/pssa.2211110240
11. L.A. Kazakevich, P.F. Lugakov // Elektronnaya tekhnika. Series: Materials., 9, p. 170 (1982).
12.G.D. Watkins, J.W. Corbett, R.S. McDonald // J. Appl. Phys.,53, p. 7097 (1982).
https://doi.org/10.1063/1.330017
13.L.I. Murin, V.P. Markevich // Fiz. Tekh. Poluprov., 22, p.1324 (1988).
14.R.C. Newman, M.J. Binns, F.M. Livingston, S. Messoloras // Physica., 116B, p. 264 (1983).
https://doi.org/10.1016/0378-4363(83)90257-7
15.Y. Takano, M. Maki, in:Semiconductor silicon, 1973, Eds.H.R. Huff and R.R. Burgess, The electrochemical Society, Pennington, 1973, p. 469.
16. J.C. Mikkelsen Jr. // Appl. Phys. Lett., 40, p. 336 (1982).
https://doi.org/10.1063/1.93089
17.M. Stavola, J.R. Patel, L.C. Kimerling, P.E. Freeland // Appl.Phys.Lett., 42, p. 73 (1983)
https://doi.org/10.1063/1.93731