Semiconductor Physics, Quantum Electronics and Optoelectronics, 3 (1) P. 015-018 (2000).
References
1. P.A. Stolk, H.J. Cossmann, D.J. Euglesham et al., Physical mechanisms of transient enhanced dopant diffusion in ion-implanted Si // J. Appl. Phys.81(9), pp. 6031-6050(1997) https://doi.org/10.1063/1.364452
2. A. Ferriero, Â. Biasse, A.M. Papon et al., Formation of the shallow p+-n junctions by dual Ge+/B+ implantation // Nucl.Instr. &Meth. in Phys. Res.,B39, pp. 413-416 (1989) https://doi.org/10.1016/0168-583X(89)90816-1
3. C. Bonafos, A. Claverie, D. Aiguier et al., The effect of the boron doping level on the thermal behavior of end-of-range defects in silicon // Appl. Phys. Lett., 71(3), pp. 365-367(1997) https://doi.org/10.1063/1.119563
4. W. Vandervorst, D.C. Houghton, F.R. Shepherd et al., Residual damage in B+ and BFi+-implanted Si // Can. J. Phys.,63(2), pp. 863-869 (1985) https://doi.org/10.1139/p85-140
5. J. Thornton, R.P. Webb, I.H. Wilson, K.C. Paus, Predicted dose, energy and implantation temperature effects on the residual disorder following the annealing of pre-amorphized silicon // Semicond. Sci. & Technol.,3(2), ðð. 281-285 (1988) https://doi.org/10.1088/0268-1242/3/4/002
6. I.V.Ostrovskii and V.N.Lysenko, Ultrasonic generation of point defects in CdS // Sov. Phys. Solid State, 24(5), pp. 682-683(1982).
7. W.K. Chu, J.W. Mayer, M.A. Nicolet, Backscattering Spectromefry,N.Y. (1977)
8. M. Vos, D.0. Boerma, P.J.M. Smulders, S. Oosterhoff, Defect and dopant depth profiles in boron-implanted silicon studied with channeling and nuclear reaction analysis //Nucl.Instr. &Meth. in Phys. Res,B17,pp. 234-241 (1986) https://doi.org/10.1016/0168-583X(86)90062-5
9. I.V.Pavlovich. Enhanced diffusion of impurities and defects in crystals in conditions of ultrasonic treatment // Phys. Stat.Sol., B180 (1), pp. 97-105 (1993). https://doi.org/10.1002/pssb.2221800108