Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 4, N 1. P. 1-4.

PACS: 61.72.T, 71.55, 72.80.P

Development of the physical insight into the nature
of the factors that control electrophysical and
other properties of semiconductors

P.I. Baranskii, V.M. Babich, E.F. Venger

Institute of Semiconductor Physics, NAS Ukraine, 45 Prospect Nauki, Kyiv, 03028, Ukraine
Tel.: (380-44) 265-62-80; Fax: (380-44) 265-83-42; E-mail: journal@isp.kiev.ua

Abstract. Evolution of the physical insight into the nature of main factors that influence the energy band structure formation in semiconductors, and, hence, their basic electrophysical, optical, thermoelectrical and even mechanical properties, is reviewed.
These factors are:
- dopant and residual impurities, intrinsic point defects, elongated defects (of the dislocation type),
- electrically active thermal donors and other complexes that are formed due to direct impurity-impurity or impurity-defect interaction.
Keywords:
electron transport, point defect complex, impurity-impurity interaction, impurity-defect interaction.

Paper received 06.07.00; revised manuscript received 26.01.01; accepted for publication 16.02.01.


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