Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 1. P. 5-8.

PACS 72.20.M, 73.40

Crystallochemistry of defects in lead telluride films

D.M. Freik, M.A. Ruvinskii, B.M. Ruvinskii, M.A. Galushchak

Physico-chemical institute at Precarpathian university named by V.Stefanyk,
Shevchenko Str., 57, Ivano-Frankivsk, 76000, Ukraine.

Abstract. The crystallochemical model of vapor-phase epitaxy of the lead telluride films has been proposed with the supposition about the simultaneous formation of singly charged, doubly charged and electroneutral Frenkel defects in the cationic sublattice. It has been shown that in spite of the large concentration of partly compensated doubly charged defects the singly charged Frenkel pairs and also play an essential role in change carrier concentration in PbTe films. The results of numerical calculation agree with the available experimental data of the dependence of charge carrier's concentration in films upon the partial pressure of tellurium vapor and the deposition's temperature in the hot-wall method.

Keywords: crystallochemistry, defects, films, lead telluride.

Paper received 14.09.00; revised manuscript received 10.01.01; accepted for publication 16.02.01.

 


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