Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 1. P. 9-11.

PACS: 78.20.C

Effect of surface condition on strain in semiconductor crystal sample

B.K. Serdega, E.V. Nikitenko, V.I. Prikhodenko

Institute of Semiconductor Physics, NAS Ukraine, 45 Prospect Nauki, Kyiv, 03028, Ukraine

Abstract. Using the optical-polarization technique with polarization modulation, we measured stresses due to surface tension in a single-crystalline silicon sample. Optical anisotropy distribution along the normal to the sample surface was studied at different state conditions, depending on its treatment. It was found that presence of a surface layer in the crystal, with physical properties differing from those in the bulk, gave rise to extended distribution of stresses in the uniform part of the crystal.

Keywords: polarization, surface, anisotropy, strain.

Paper received 09.11.00; revised manuscript received 01.02.01; accepted for publication 16.02.01.


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