Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 1. P. 9-11.

PACS: 78.20.C

Effect of surface condition on strain in semiconductor crystal sample

B.K. Serdega, E.V. Nikitenko, V.I. Prikhodenko

Institute of Semiconductor Physics, NAS Ukraine, 45 Prospect Nauki, Kyiv, 03028, Ukraine
E-mail: bshl@polarget.semicond.kiev.ua

Abstract. Using the optical-polarization technique with polarization modulation, we measured stresses due to surface tension in a single-crystalline silicon sample. Optical anisotropy distribution along the normal to the sample surface was studied at different state conditions, depending on its treatment. It was found that presence of a surface layer in the crystal, with physical properties differing from those in the bulk, gave rise to extended distribution of stresses in the uniform part of the crystal.

Keywords: polarization, surface, anisotropy, strain.

Paper received 09.11.00; revised manuscript received 01.02.01; accepted for publication 16.02.01.

 


Full text in PDF (Portable Document Format)  [PDF 67K]
The copies of  separate papers in PDF format can be ordered using the address
journal@isp.kiev.ua .