Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 1. P. 40-43.
PACS: 71.25.Rk, 81.60.Cp
Electrical properties of macroporous silicon structures
Karachevtseva L.A., Lytvynenko O.A., Malovichko E.A.,
Institute of Semiconductor Physics, 45 Nauki Prsp., 03028 Kyiv, Ukraine
Abstract. The dependencies of electron conductivity, concentration and mobility on pore size and concentration were investigated for macroporous silicon structures. The electron conductivity and concentration in two-layer structures of macroporous silicon, and also in a matrix of macroporous layers have a maximum for a macropore volume of V = 0.3-0.4. Thus the electron mobility decreases monotonically. The experimental results were explained by a model based on the existence of electron-enriched regions around pores, with thickness DD » 1 mm formed after electrochemical and chemical treatment of the macropore walls.
Keywords: macroporous silicon strucures, electron conductivity, concentration, mobility.
Paper received 26.12.00; revised manuscript received 26.01.01; accepted for publication 16.02.01.