Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 1. P. 40-43.

PACS: 71.25.Rk, 81.60.Cp

Electrical properties of macroporous silicon structures

Karachevtseva L.A., Lytvynenko O.A., Malovichko E.A.,
Sobolev V.D. and Stronska O.J.

Institute of Semiconductor Physics, 45 Nauki Prsp., 03028 Kyiv, Ukraine
Tel.: 265 9815, Fax: 265 8243, E-mail: kartel@mail.kar.net

Abstract. The dependencies of electron conductivity, concentration and mobility on pore size and concentration were investigated for macroporous silicon structures. The electron conductivity and concentration in two-layer structures of macroporous silicon, and also in a matrix of macroporous layers have a maximum for a macropore volume of V = 0.3-0.4. Thus the electron mobility decreases monotonically. The experimental results were explained by a model based on the existence of electron-enriched regions around pores, with thickness DD 1 mm formed after electrochemical and chemical treatment of the macropore walls.

Keywords: macroporous silicon strucures, electron conductivity, concentration, mobility.

Paper received 26.12.00; revised manuscript received 26.01.01; accepted for publication 16.02.01.

 


Full text in PDF (Portable Document Format)  [PDF 186K]
The copies of  separate papers in PDF format can be ordered using the address
journal@isp.kiev.ua .