Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 1. P. 44-47.

PACS: 61.72.T, 78.55.M

Activation of porous Si blue emission
due to preanodization ion implantation

A.G. Rozhin, N.I. Klyui, V.G. Litovchenko, V.P. Melnik, B.N. Romanyuk, Yu.P. Piryatinskii*

Institute of Semiconductor Physics, 41 prospect Nauki, 03028, Kiev, Ukraine
*Institute of Physics, 46 prospect Nauki, 03022, Kiev, Ukraine

Abstract. Implantation of B+, N+, and B++N+ ions into initial silicon wafers was carried out before anodization process. The results of photoluminescent (PL) study of porous Si samples prepared on B+ or N+ implanted wafers show a decrease in the photoluminescence intensity when compared with the initial porous Si. In contrast to this, the B++ N+ double doped samples show the increasing of the photoluminescence intensity. This effect can be explained by donor-acceptor pairs formation, and, as a result, the new recombination-active radiative channel creation. Rapid thermal annealing (RTA) treatment leads to significant decrease of PL intensity in the longwave spectral range for initial sample and samples prepared on implanted substrates. Furthermore, RTA treatments leads to the activation of the porous Si high-energy PL formed on the B+ implanted wafers.

Keywords: photoluminescence, porous Si, implantation.

Paper received 30.01.01; revised manuscript received 05.02.01; accepted for publication 16.02.01.

Full text in PDF (Portable Document Format)  [PDF 415K]
The copies of  separate papers in PDF format can be ordered using the address .