Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 1. P. 25-30.
PACS: 78.55.Et; 78.55.-m
Influence of g-irradiation on photoluminescence
spectra of CdTe:Cl
1) Yu.Fed’kovych Chernivtsi National University,
2 Kotsyubynsky st., 58012 Chernivtsi, Ukraine
Abstract. Photoluminescence properties of high-resistivity CdTe:Cl crystals irradiated with g-rays have been studied. An enhancement of near-edge luminescence intensity is observed after a low dose g-irradiation (D < 10 kGy). For larger doses of g-irradiation both a decrease of the total luminescence intensity and the intensity redistribution between the lines of excitons bound to different acceptors occur. For the donor-acceptor recombination with A-centers participation, an increase of the Huang-Rhys factor S is found with D increase. This fact can be explained by decrease of the A-centers concentration. The experimentally determined S values are compared with a calculated S(R) dependence for different distances R between donors and acceptors.
Keywords: cadmium telluride, photoluminescence, g-irradiation,
Huang-Rhys factor, low dose effect, self-compensation