Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 1. P. 36-38.
PACS: 61.10.N, 61.66, 68.35.B
Divergent-beam X-ray structural studies of a
disturbed surface layer in silicon plates
V.N. Bakul Institute for Superhard Materials,
NAS of Ukraine, 04074 Kyiv, Ukraine
Abstract. A Kossel chamber for reflected-beam X-ray studying of single crystal surfaces has been developed on the basis of a BS-340 scanning electron microscope. We have examined the structure of a disturbed layer of silicon plates after chemico-mechanical polishing. The intensity of X-ray reflection from the lattice planes intersecting a polished surface of a plate characterizes the perfection degree of the disturbed layer, is of a periodic nature and exhibits a tendency to damp deep within the plate.
Keywords: Kossel diffraction, X-ray, structure, silicon.