Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 1. P. 42-45.

PACS: 78.55.Cr, 78.67.De, 85.35.Be

Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa1-xAs/GaAs
A.I. Klimovskaya, N.N. Grigor’ev, E.G. Gule, Yu.A. Dryha, V.G. Litovchenko

Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
265-70-91 e-mail:,

Abstract. InxGa1-xAs QW-layers embedded in GaAs matrix have been characterized by photoluminescence (PL). The relation between the PL parameters and mismatch of the lattice parameters of the layer and matrix was established. In highly strained layers several PL bands were observed instead one band. This is probably a result of alternating content of In raised only in highly strained layers.

Keywords: critical thickness, instability of composition, photoluminescence.
Paper received 31.10.01; revised manuscript received 23.01.02; accepted for publication 05.03.02.

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