Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 1. P. 46-50.
Current flow mechanisms in p-i-n structures
based on cadmium telluride
1) Chernivtsi National University, 2 Kotsyubynsky
st., 58012 Chernivtsi, Ukraine
Abstract: Electrical properties of p-i-n-structures obtained with low-temperature oxygen and lithium diffusion into low-resistive n-CdTe substrates have been investigated. The role of generation-recombination processes as well as trapping, impact ionization and overbarrier carriers transport in the dark current formation of samples studies have been defined.
Keywords: p-i-n-structure, generation-recombination, injection,
cut-off current, impact ionization, height of the barrier, cadmium telluride.