Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 1. P. 46-50.

PACS: 73.40.-c,73.40.Ty

Current flow mechanisms in p-i-n structures based on cadmium telluride
P.M. Gorley1), M.V. Demych1), V.P. Makhniy1), Zs.J. Horvath2), V.A. Shenderovsky3)

1) Chernivtsi National University, 2 Kotsyubynsky st., 58012 Chernivtsi, Ukraine
Phone: +380 (3725) 98 473, +380 (3722) 44221; e-mail: gorley@west.com.ua
2) Research Institute for Technical Physics and Material Science, P.O.Box 49, 114 Budapest, Н-1525 Hungary
e-mail: horvzsj@mfa.kfki.hu
3) Institute of Physics, NAS of Ukraine, 46 prospekt Nauky, 03028 Kyiv, Ukraine
Phone: +380 (44) 265 0777, fax: +380 (44) 265 0777, е-mail: schender@iop.kiev.ua

Abstract: Electrical properties of p-i-n-structures obtained with low-temperature oxygen and lithium diffusion into low-resistive n-CdTe substrates have been investigated. The role of generation-recombination processes as well as trapping, impact ionization and overbarrier carriers transport in the dark current formation of samples studies have been defined.

Keywords: p-i-n-structure, generation-recombination, injection, cut-off current, impact ionization, height of the barrier, cadmium telluride.
Paper received 16.06.00; revised manuscript received 26.11.01; accepted for publication 05.03.02.

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