Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 1. P. 51-57.

PACS: 73.20.-r, 73.30.+y,73.40.Lq

Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb0.935Sn0.065Te0.243Se0.757/In Schottky barrier structures
A.I. Tkachuk, O.N. Tsarenko, S.I. Ryabets

Vynnychenko’s Kirovograd State Pedagogical University, 1 Shevchenko St., 25006 Kirovograd, Ukraine
Phone: +380 (522) 24 8901; fax: +380 (522) 24 8544; e-mail:

Abstract. The high-planar epitaxial layers of n-Pb0.935Sn0.065Te0.243Se0.757 quaternary solid solutions, lattice matched with {111}BaF2 substrates, have been grown from bounded volume of supersaturated melt-solutions in the growth temperature region 773-873 K by the liquid phase epitaxy technique at a programmatic refrigeration rate of 0.1-0.2 K/min and a temperature reduction range of DT=5-10 K. The laboratory methodology of the production of Cu/d-layer/n-Pb0.935Sn0.065Te0.243Se0.757/In Schottky barrier structures by thermal vacuum deposition has been developed. The current- and farad-voltage characteristics of these structures have been measured at the 77 K, and the dependence of the diode electro-physical properties on the d-layer width has been studied.

Keywords: lead-tin chalcogenide; liquid phase epitaxy; Schottky barrier structures; intermediate oxide layer.
Paper received 29.10.01; revised manuscript received 21.12.01; accepted for publication 05.03.02.

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