Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 1. P. 71-75.

PACS: 77.55.+f, 77.80.

Silicon carbide LED
S.I. Vlaskina

Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
Phone: +380 (44) 269 3792; fax +380 (44) 265 8342; e-mail: businkaa@mail.ru
Dong Seoul College, 461-714, 423, Bokjung-Dong, Sungnam-city, Kyonggi-do, Korea
Phone: 82 (031) 720 2141; fax: 82 (031) 720 2261; e-mail: svitlana@haksan.dsc.ac.kr

Abstract. Silicon carbide has been widely used as material for manufacturing yellow, red, green LED and optoelecronics devices (in­dicators, screens). The silicon carbide LED technology has been in­vestigated for improvement of their operational characteristics. This in­cludes the influences of the surface processing (etching, annealing), the formation method for the p-n junctions and the contacts on the LED properties. Light-emitting devices used as light sources for optical-fiber communication lines. LED fabricated by Al+ ion-implanted in 6H-SiC and investigated their characteristics for an effective green LED. The brightness of the ion-implanted p-n junction was found to be two orders higher than that of diffusion p-n junction, and the best value was 2000-10000 cd/m2 with passing current about 0.5 mA through area 50x50 mm and applied voltage about 2.6 ± 0.2 V. The ion-implanted structures showed a high stability of light in the temperature range of 77-600 K.

Keywords: silicon carbide, LED, ion implantation
Paper received 05.02.02; revised manuscript received 08.02.02; accepted for publication 05.03.02.

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