Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 1. P. 78-88.
Dielectric, ferroelectric and piezoelectric properties
of sputtered PZT thin films on Si substrates: influence of film thickness
IEMN - DOAE - MIMM. UMR CNRS 8520 Universite
de Valenciennes ZI petite savate, 59600 Maubeuge, France
Abstract. Lead titanate zirconate Pb(Zr,Ti)O3 (PZT) thin films
were deposited on platinized silicon substrates by r.f. magnetron sputtering
and crystallized with preferred (110) or (111) orientation by conventional
annealing treatment. The film structure
evolution was observed as a function of the film thickness. Whatever the
film thickness in the range 0.07 - 3 mm, the preferred orientation of
the film is maintained. The film microstructure and, in particular, grain
sizes varied with the film thickness; more precisely, grain sizes increases,
both for (111) and (110) films with the film thickness. The electrical
properties such as dielectric, ferroelectric and piezoelectric ones were
systematically evaluated functions of the film thickness and their orientation.
Keywords: ceramic thin film; sputtering; film thickness and orientation;
dielectric, ferroelectric and piezoelectric properties.