Semiconductor Physics, Quantum Electronics and Optoelectronics, 5 (1) P. 036-038 (2002).
References
1. N.A. Bert, S. G. Konnikov,V.E. Umansky, Determination of the value of the difference in elemental cell parameters of semiconducting heterostructures by X-ray divergent beam // Fizika i Tekhnika Poluprovodnikov,14(10) p.1899-1903, 1980.
2. K. Lonsdale, Divergent-beam X-ray photography of crystals // Phil. Trans. Royal Soc. of London, 240(818), pp. 219-250,1948. https://doi.org/10.1098/rsta.1947.0002
3. A. S. Vishnevsky and V. N. Tkach, Precision measurement of the diamond lattice constant by Kosselís method // Sverkhtverdye Materialy, 4, pp. 22-28, 1982.
4. N. V. Novikov, V. N. Tkach A. and S. Vishnevsky. Elastic characteristics of synthetic diamond single crystals // DAN SSSR, 302(6), pp. 1368-1371.
5. V. N. Tkach, The effect of growth conditions on structural characteristics of diamond // J. of Superhard Materials, 19(5), pp. 29-33, 1997.
6. V. A. Ponomarev, V. I. Karban, V. N. Tkach, and A. Yu. Samoylenko, A method of measuring the thickness of a disturbed layer of a single crystals USSR Authorís Certificate 4,612,881, Publ. 3 October 1989, Byullet. no. 25.