2. S.L.Bravina, N.V. Morozovsky, ì†Pyroelectricity in some ferroelectric semi conductors and its applications†î, // Ferroelectrics, 118, 217-224, (1991). https://doi.org/10.1080/00150199108014761
4. D. Eichner, M.Giousouf, W. Von Munch, ì†Measurements on micromachined silicon accelerometers with piezoelectric sensor action†î, // Sensors & Actuators, 76, 247-252,(1999). https://doi.org/10.1016/S0924-4247(99)00039-4
5. A. Schroth, C. Lee, S.Matsumoto, R. Maeda, ì†Application of sol-gel deposited thin PZT film for actuation of 1D and 3D scanners†î, // Sensors & Actuators, 73, 144-152, (1999). https://doi.org/10.1016/S0924-4247(98)00265-9
6. S-K. Hong, C.S. Hwang, O.S. Kwon, N.S. Kang, ì†Polarity dependent rejunevation of ferroelectric properties of integrated SrBi2Ta2O9 capacitors by electrical stressing†î, // Appl.Phys.Lett., 76(3), 324-326, (2000). https://doi.org/10.1063/1.125764
7. J.F.M. Cillessen, M.W. Prins, R.M. Wolf, ì†Thickness dependence of the switching voltage in all-oxide ferroelectric thin film capacitors prepared by pulsed laser deposition†î, // J.Appl.Phys., 81(6), 2777-2783, (1997). https://doi.org/10.1063/1.363961
8. S- Yan Chen, I-Wei Chen, ì†Comparative role of metal-organic decomposition-derived [100] and [111] in electrical properties of Pb(Zr,Ti)O3†î, // Jpn.J.Appl.Phys., 36(7A), 4451-4458, (1997). https://doi.org/10.1143/JJAP.36.4451
9. L. Lian, N.R. Sottos, ìEffect of thickness on the piezoelectric and dielectric properties of lead zirconate titanate thin films†î, // J.Appl.Phys., 87(8), 3941-3949, (2000). https://doi.org/10.1063/1.372439
10. K. Aoki, Y. Fukuda, K. Numata, A. Nishima, A. Nishimura, ì†Dielectric properties of (111) and (100) lead zirconate titanate thin films prepared by sol-gel technique†î, // Jpn.J.appl.Phys.part.1, 33(9B), 5155-5158, (1994). https://doi.org/10.1143/JJAP.33.5155
11. R. Kurchania, S.J. Milne, ì† Characterization of sol-gel Pb(Zr0.53Ti0.47)O3films in thickness range 0.25-10μm†î, // J.Mater.Res., 14(5), 1852-1859, (1999). https://doi.org/10.1557/JMR.1999.0249
12. H-J. Nam, H-H.Kim, W-J.Lee, ì†The effects of the preparation conditions and the heat treatment conditions of Pt/Ti/SiO2/Si substrates on the nucleation and growth of Pb(Zr,Ti)O3thin films†î, // Jpn.J.appl.Phys., 37(6A), 3462-3470, (1998). https://doi.org/10.1143/JJAP.37.3462
13. B. Jaber, D. Remiens, B. Thierry, ì†Substrate temperature target composition effects on PbTiO3produced in-situ by sputtering†î, // J.Appl.Phys, 79(4), 1182-1187, (1996). https://doi.org/10.1063/1.360903
14. .†G. Velu, D. Remiens, ì†Electrical properties of sputtered PZT films on stabilized platinum electrodes†î, // J.Europ.Ceram.Soc., 19, 2005-2015, (1999). https://doi.org/10.1016/S0955-2219(99)00008-4
15. G.Velu, D. Remiens, B. Thierry, ì†Ferroelectric properties of PZT film prepared by sputtered with stoichiometric single oxide target†: comparison between conventional and RTA annealing†î, // J.Europ.Ceram.Soc, 1749-1758, (1997). https://doi.org/10.1016/S0955-2219(97)00031-9
16. I. Stolichnov, A. Tagantsev, N. Setter, S.S. Okhonin, P. Fazan, J.S. Croos , M. Tsukada, ì†Dielectric breakdown in (Pb,La) (Zr,Ti)O3 ferroelectric thin films with Pt and oxide electrodes†î, // J.Appl.Phys.87(4), 1925-1931, (2000). https://doi.org/10.1063/1.372114
17. K.H†. Park, C.Y. Kim, Y.W. Jeong, H.J.K. Won, K.Y. Kim, J.S. Lee, S.T. Kim, ì†Micro structures and interdiffusion of Ti/Pt electrodes wtih respects to annealing in the oxygen ambiant†î, // J.Mater.Res., 10(7), 1791-1794, (1995). https://doi.org/10.1557/JMR.1995.1790
18. H-J.Nam, D-K.Choi, W-J.Lee, ì†Formation of hillocks on Ti/Pt electrodes and their effects on short phenomena of PZT films deposited by reactive sputtering†î, // Thin Solid Films, 371, 264-271, (2000). https://doi.org/10.1016/S0040-6090(00)00970-6
19. J.C. Kim, D.S. Yoon, J.S. Lee, C.G. Choi, K. No,†ì†A study on the micro structure of the prefered orientation of lead zirconate titanate (PZT) thin films†î, // J.Mater.Res.12(4),1043-1047, (1997). https://doi.org/10.1557/JMR.1997.0145
20. K.G. Brooks, I.M. Reaney, R. Klissurka, Y. Huang, L. Bursill, N. Setter, ì†Orientation of rapid thermally annealed lead zirconate titanate thin films on (111) Pt substrates†î, // J.Mater.Res., 9(10), 2540-2553, (1994). https://doi.org/10.1557/JMR.1994.2540
21. D.V.†Taylor, D. Damjanovic, ì†Piezoelectric properties of rhomboedral Pb(Zr,Ti)O3 thin films with (100) and (111) and ì†random crystallographic orientation†î, // Appl.Phys.Lett.,76(12), 1615-1617, (2000). https://doi.org/10.1063/1.126113
23. H. Fujisawa, S. Nakashima, M. Shimuzu, H. Niu, ì†Dependence of electrical properties of Pb(Zr,Ti)O3thin films on the grain size and film thickness†î, // Proc. Of the 11th Int. Symp.on Applications of Ferroelectrics ñISAF-, 77-80, (1998).
24. H.J. Kim, J.H. Oh, H.M. Jang, ì† Thermodynamic theory of stress distribution in epitaxial Pb(Zr,Ti)O3 thin films†î, // Appl.Phys.Lett., 75(20), 3195-3197, (1999). https://doi.org/10.1063/1.125275
25. D.Fu, T. Ogawa, H. Suzuki, K. Ishikawa, ì†Thickness dependence of stress in lead titanate thin films deposited on Pt-coated Si†î, // Appl.Phys.Lett., 77(10), 15321534, (2000). https://doi.org/10.1063/1.1308061
26. J.L. Deschanvre, P. Rey, G. Delabouglise, M. Labeau, ìCharacterization of piezoelectric properties of zinc oxide thin films deposited on silicon for sensors applications†î, // Sensors & Actuators, A33, 43-45, (1992). https://doi.org/10.1016/0924-4247(92)80223-P
27. A.L. Kholkin, C. Wutchrich, D.V. Taylor, N. Setter, ìInterferometric measurements of electric field-induced displacement in piezoelectric thin films†î, // Rev.Sci.Instrum., 65(5),1935-1941, (1996). https://doi.org/10.1063/1.1147000
28. H. Okino, T. Nishikawa, M. Shimuzu, T. Horiuchi, K. Matsushige, ìElectrical properties of highly strained epitaxial Pb(Zr,Ti)O3 thin films on MgO (100)†î, // Jpn.J.Appl.Phys., 38(9B), 5388-5391, (1999). https://doi.org/10.1143/JJAP.38.5388
29. C.R. Cho, W.J. Lee, B.G. Yu, B.W. Kim, ìDielectric and ferroelectric response as a function of annealing temperature and the film thickness of sol-gel deposited Pb(Zr0.52, Ti0.48)O3 thin films†î, // J.Appl.Phys., 86(5), 2700-2711, (1999). https://doi.org/10.1063/1.371114
30. S-I. Hirano, T. Yogo, K. Kikuta, Y. Araki, M. Saitoh, S. Ogasahara, ìSynthesis of highly oriented lead zirconate-lead titanate films using metallo-organicî, // J.Am.Ceram.Soc., 75(10), 2785-2789, (1992). https://doi.org/10.1111/j.1151-2916.1992.tb05505.x
31. F. Fujisawa, S. Nakashima, K. Kaibara, M. Shimuzu, H.Niu, ìSize effects of epitaxial and polycristalline Pb(Zr,Ti)O3 thin films grown by metalorganic chemical vapor deposition†î, // Jpn.J.appl.Phys., 38(9B), 53925396, (1999). https://doi.org/10.1143/JJAP.38.5392
32. F. Xu, S. Trolier-Mckinstry, W. Ren, B. Xu, Z-L. Xie, K.J. Hemker, ìDomain wall motion and its contribution to the dielectric and piezoelectric properties of PZT films†î, // J.Appl.Phys., 89(2), 1336-1349, (2000). https://doi.org/10.1063/1.1325005
33. S. Hiboux, P. Muralt, ìPiezoelectric and dielectric properties of sputter deposited (111), (100) and random oriented Pb(Zrx,Ti1-x)O3(PZT) thin films†î, // Ferroelectrics 224(1-4), 315-322, (1999). https://doi.org/10.1080/00150199908210582
34. S.Y. Chen, I.W. Chen, ì†Com,rative role of metalorganic decomposition ñderived [100] and [111] in electrical properties of Pb(Zr,Ti)O 3thin films†î, // J.Am.Ceram.Soc., 36(7A),4451-4458, (1997). https://doi.org/10.1143/JJAP.36.4451
36. K.Lefki, G.J.M. Dormans, ìMeasurement of piezoelectric coefficients of ferroelectric thin films†î, // J.Appl.Phys., 76(3),1764-1767, (1994). https://doi.org/10.1063/1.357693
37. E. Cattan, T. Haccart, D. Remiens, ì†e 31 piezoelectric constant measurement of lead zirconate titanate thin films†î, // J.Appl.Phys., 86(12), 7017-7023, (1999). https://doi.org/10.1063/1.371788
38. A.L. Kholkin, A.K. Tagantsev, E.L. Colla, D.V. Taylor, N.Setter, ìPiezoelectric and dielectric aging in pb(Zr,Ti)O3 thin films and bulk ceramics†î, // Int.Ferroelectrics, 15, 317-324, (1997). https://doi.org/10.1080/10584589708015722
40. S. Sun, Y. Wang, P.A. Fuierer, B.A. Tuttle, ìAnnealing effects on the internal bias field in ferroelectric PZT thin films with self-polarization†î, // Int.Ferroelectrics, 23, 25-43,(1999). https://doi.org/10.1080/10584589908210138
41. U. Robels, L. Schneider-Stormann, G. Arlt, ìDomain wall trapping as a result of internal bias fieldsî, // Ferroelectrics 133,(1-4), 223-228, (1992). https://doi.org/10.1080/00150199208218003
42. W.L. Warren, B.A. Tuttle, D. Dimos, G.E. Pike, H.N. Al-Shareef, R. Ramesh, J.J.T. Evans, ìImprint in ferroelectric capacitors†î, // Jpn.J.appl.Phys., 35(Part.1-2B), 1521-1524,(1996). https://doi.org/10.1143/JJAP.35.1521
43. M.V. Raymond, D.M. Smyth, ì†Defects and charge transport in perovskite ferroelectrics†î, // J.Phys.Chem.Solids, 57(10), 1507-1511, (1996). https://doi.org/10.1016/0022-3697(96)00020-0
44. B. Jaber, E. Cattan, P. Tronc, D. Remiens, B. Thierry, ìPi-ezoelectric properties of sputtered PbTiO3 films†: growth temperature and poling treatment effect†î, // J.Vac.Sci.Tech., A16(1), 144-152, (1998). https://doi.org/10.1116/1.580954
45. . C. Lee, T. Itoh, T. Suga, ì†Characterization of micro mechanical piezoelectric PZT force sensors for dynamic scanning force microscopy†î, // Rev.Sci.Instrum.68(5), 2091-2100,(1997). https://doi.org/10.1063/1.1148102