Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 1. P. 32-36.

PACS: 61.16.Ch, 79.70.+q

Electron field emission from SiOx films
└.└. ┼vtukh, I.Z. Indutnyy, I.P. Lisovskyy, Yu.M. Litvin, V.G. Litovchenko, P.╠. Lytvyn, D.╬. ╠azunov, Yu.V. Rassamakin, P.┼. Shepeliavyi

Institute of Semiconductor Physics, NAS of Ukraine, 41 prospect Nauky, 03028 Kyiv, Ukraine
Phone: +38(044) 265 3852; e-mail:

Abstract. Efficient electron field emission from silicon flat cathode coated with SiOx film (x 0.3-0.5) was observed both before and after thermal (1000 C) annealing with subsequent etching in HF solution. Oxide films were produced by silicon thermal evaporation in vacuum (10-5 Torr). Using optical spectroscopy in visible and infrared ranges, as well as AFM technique, structural features of these films were investigated. It was shown that initial SiOx film may be represented as SiO§ (Si) composite (x 1.2). Thermal annealing causes further phase segregation in film material, and it is transformed into SiO2 (Si) composite. During such a process, silicon grains size decreases and their density increases. The model of electron field emission from the surface of such films was proposed. It was supposed that limitation process of the current flow under high electric fields is connected with Fowler-Nordheim tunneling through barriers Si-SiO§-vacuum or Si-vacuum. Current peaks in emission I-V characteristics were explained in the framework of resonance tunneling mechanism.
Investigated structures seems to be perspective for application as flat field cathodes in vacuum electronic devices and in flat panel field emission displays.

Keywords: electron field emission, flat cathodes, silicon oxide, nanostructures, structural transformations.
Paper received 24.12.02; accepted for publication 18.03.03.

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