Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 1. P. 37-40.
Investigations of physical
mechanisms of metal-insulator transition in highly strained n-Si and n-Ge
1Institute of Semiconductor Physics, NAS
of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
Abstract. Analysis of experimental results on transport phenomena is presented for highly uniaxially strained silicon and germanium crystals heavily doped by shallow donors. Possible mechanisms of the strain induced metal-insulator (MI) transition determined by peculiarities of the c-band energy spectrum transformation in n-Si and n-Ge are discussed. The main statements of the effective mass-donor concept for hydrogen-like impurities in monocrystalline semiconductors were verified.
many-valley semiconductors, metal-insulator transition, effective-mass
theory, high uniaxial pressure