Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 1. P. 41-46.

PACS: 61.10.Kw, 61.43.Hv, 68.35.-p

Determination of surface parameters of solids by methods of X-ray total external reflection
S.V. Balovsyak, I.M. Fodchuk, P.M. Lytvyn1

Chernivtsi National University, street Kotsubynsky, 2, Chernivtsi, 58012, Ukraine
1Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine

Abstract. The series of GaAs and SiO2 samples with the specially prepared one- and two-dimensional surface reliefs have been investigated by the methods of integral and differential curve total external reflection of X-rays. The direct and inverse problem was solved, taking into consideration data obtained by the method of atomic-force microscopy: the theoretical curves of total external reflection are calculated and parameters describing a surface relief of the samples are restored.

Keywords: total external reflection of X-rays, surface relief, rocking curves, fractals.
Paper received 24.01.03; accepted for publication 18.03.03.

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