Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 1. P. 53-54.
PACS: 75.50.Pp; 75.75.+a; 85.80.Jm
Magnetic point contact in
ferromagnetic semiconductor (Ga,Mn)As
1Institute of Physics, Polish Academy of
Sciences, 02-668 Warszawa, Poland,
Abstract. We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions implantation, instead of chemical etching, is much better method of tailoring nanometer-size circuits in (Ga,Mn)As suitable for future spin electronics.
ferromagnetic semiconductors, magnetoresistance, nanostructures, ion implantation