Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 1. P. 53-54.

PACS: 75.50.Pp; 75.75.+a; 85.80.Jm

Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
T. Figielski1, T. Wosinski1, A. Morawski1, O. Pelya1, A. Makosa1, W. Dobrowolski1, J. Wrobel1, J. Sadowski2, J. Jagielski3, J. Ratajczak4

1Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Poland,
2Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Poland and Max-lab, Lund University, 22100 Lund, Sweden
3Institute of Electronic Materials Technology, 01-919 Warszawa, Poland
4Institute of Electron Technology, 02-668 Warszawa, Poland

Abstract. We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions implantation, instead of chemical etching, is much better method of tailoring nanometer-size circuits in (Ga,Mn)As suitable for future spin electronics.

Keywords: ferromagnetic semiconductors, magnetoresistance, nanostructures, ion implantation
Paper received 25.11.02; accepted for publication 18.03.03.

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