Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 1. P. 55-57.
GaAs and AlGaAs layers obtained by LPE
SRC "Karat", 202 Stryiska st,
290031 Lviv, Ukraine
Abstract. Influence of Yb and Al co-doping gallium melt during LPE growth of the GaAs epitaxial layers on their properties is investigated. It is shown that both morphology and electrophysical parameters of the films are changed under influence of the doping impurities applied. Obtained results are explained by simultaneous Yb gettering action with respect to oxygen and silicon in the solution-melt, and also by lowering the concentration of Si in the films due to Al entering into Ga sub-lattice.
gallium arsenide, electrophysical properties