Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 1. P. 58-61.

PACS: 61.72.Lk; 68.55.Ln; 71.55.Eq; 73.20.Dx

Electrical activity of misfit dislocations in GaAs-based heterostructures
T. Wosinski

Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warszawa, Poland
Fax: +48 22 843 0926; e-mail:

Abstract. Electrical properties of lattice-mismatch induced defects in GaAs/InGaAs and GaAs/GaAsSb heterostructures have been studied by means of electron-beam induced current (EBIC) in a scanning electron microscope and deep-level transient spectroscopy (DLTS). DLTS measurements, carried out with p-n junctions formed near the heterostructure interfaces, revealed one electron trap and one hole trap induced by the lattice mismatch. The electron trap has been attributed to electron states associated with threading dislocations in the ternary compound close to the interface, whereas the hole trap has been ascribed to misfit dislocations at the heterostructure interface. Detailed investigation of the dependence of DLTS-line amplitude and its shape on the filling time of the traps with charge carriers allowed us to specify the type of electronic states related to both traps.

Keywords: semiconductor heterostructures, dislocations, deep levels, capture kinetics.
Paper received 21.11.02; accepted for publication 18.03.03.

Download full text in PDF  [PDF 339K]
The copies of  separate papers in PDF format can be ordered using the address .