Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 1. P. 62-67.
Electron emission modulation
effects in micro-size structures
Institut für Hochfrequenztechnik, Technische
Universität Darmstadt, Merckstr.25, Darmstadt 64283, Germany
Abstract. A promising application of field-emission phenomena is microwave high-frequency oscillation generation. In this presentation, new effects at the field emission, as a perspective mechanism of high-frequency oscillation generation, has been investigated and analyzed. The mechanisms are connected with the generation of oscillations in field emission structures (i) based on the silicon or GaAs tips with ultrathin diamond-like carbon (DLC) films, (ii) III-V semiconductors (GaAs, GaN) and (iii) SiGe materials.
Keywords: field emission, microwave generation.