Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 1. P. 62-67.

PACS: 79.70.+q

Electron emission modulation effects in micro-size structures
H. Hartnagel

Institut für Hochfrequenztechnik, Technische Universität Darmstadt, Merckstr.25, Darmstadt 64283, Germany
E-mail: Hartnagel@hf.tu-darmstadt.de

Abstract. A promising application of field-emission phenomena is microwave high-frequency oscillation generation. In this presentation, new effects at the field emission, as a perspective mechanism of high-frequency oscillation generation, has been investigated and analyzed. The mechanisms are connected with the generation of oscillations in field emission structures (i) based on the silicon or GaAs tips with ultrathin diamond-like carbon (DLC) films, (ii) III-V semiconductors (GaAs, GaN) and (iii) SiGe materials.

Keywords: field emission, microwave generation.
Paper received 19.12.02; accepted for publication 18.03.03.

Download full text in PDF  [PDF 916K]
The copies of  separate papers in PDF format can be ordered using the address
journal@isp.kiev.ua .