Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 1. P. 97-101.
PACS: 07.07.Df, 77.65.Ly, 85.30.Kk
About manifestation of the
piezojunction effect in diode temperature sensors
Institute of Semiconductor Physics, NA Sciences of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
Abstract. An analytical theory of piezojunction effect has developed in application
to silicon diode temperature n+-p type sensors, which for the
first time takes into account three-subbands structure of the valence
band of silicon. The compressive and tensile stresses (along the main
crystallographic directions), long- and short-base diodes, longitudinal
and transverse effects have been considered.
Keywords: diode temperature sensor, mechanical stress, piezojunction effect, silicon.