Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 1. P. 97-101.

PACS: 07.07.Df, 77.65.Ly, 85.30.Kk

About manifestation of the piezojunction effect in diode temperature sensors
V.L. Borblik,Yu.M. Shwarts, E.F. Venger

Institute of Semiconductor Physics, NA Sciences of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
Phone: +38(044) 265 6292, e-mail: borblik@lab2.semicond.kiev.ua

Abstract. An analytical theory of piezojunction effect has developed in application to silicon diode temperature n+-p type sensors, which for the first time takes into account three-subbands structure of the valence band of silicon. The compressive and tensile stresses (along the main crystallographic directions), long- and short-base diodes, longitudinal and transverse effects have been considered.
It is shown that the three-subbands model results in even more nonlinear dependence of changes in the sensor readings on stress value (in comparison with the two-subbands model), holds minimality of the longitudinal piezojunction effect under stress orientation along the [100] direction and predicts substantially larger effect value for the strain perpendicular to the current through the diode.

Keywords: diode temperature sensor, mechanical stress, piezojunction effect, silicon.
Paper received 27.12.02; accepted for publication 18.03.03.

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