PACS: 71.35.-y, 72.20.jv, 78.20.-e, 78.60.-b, 78.60.Fi
Exciton effects in band-edge electroluminescence
of silicon barrier structures
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45, prospekt Nauky, 03028 Kiev, Ukraine
Abstract. A theoretical analysis of the band-edge electroluminescence efficiency in silicon
diodes and p-i-n-structures has been made. We have shown that maximal possible efficiency
can achieve 10 % both at room and liquid nitrogen temperatures. Maximal values of the
efficiency are restricted by the interband Auger recombination process. It is found that
electroluminescence efficiency decreases rapidly with the decrease of characteristic Shockley-
Reed-Hall nonradiative lifetime for minority carriers. It is shown that even at room temperatures
the main contribution into the edge electroluminescence in silicon barrier structures is
given by excitonic effects. Dark I-V characteristics of directly biased silicon diodes measured
both at room and nitrogen temperatures are used to explain anomalous temperature dependencies
of silicon diode electroluminescence.
Keywords: excitons, electroluminescence, internal quantum efficiency, silicon barrier structures.
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