PACS: 61.72.Bb; 61.72.Ji; 61.72.Yx
Nucleation, growth and transformation
of microdefects in FZ-Si
Zaporozhye Institute of State & Municipal Government, 70B, Zhukovskii str., 69002 Zaporozhye, Ukraine
Abstract. The physical model of microdefects formation in dislocation-free FZ-Si single crystals is offered. Experimental results and theoretical data allows to approve that recombination between vacancy and self-interstitials at high temperatures is hampered by an entropy barrier. Established is that the process of microdefects formation in silicon proceeds simultaneously by two independent mechanisms: the vacancy and interstitial ones.
Keywords: microdefects, silicon, interstitial, vacancy.