PACS: 79.20.Rf; 79.60.Bm
State of Cd1-xZnxTe and Cd1-xMnxTe surface
depending on treatment type
S.G. Dremlyuzhenko, Z.I. Zakharuk, I.M. Rarenko, V.M. Srtebegev,
A.G. Voloshchuk, I.M. Yurijchuk
Chernivtsi National University, 2, Kotsyubynsky str., 58012 Chernivtsi, Ukraine
E-mail: email@example.com, Phone.: +380 (372) 584875
Abstract. The morphology and composition of Cd1-xZnxTe and Cd1-xMnxTe solid solutions
surfaces after different types of surface treatment were investigated. Chemical etching of the
surfaces and polishing by diamond pastes cause change of surface stoichiometry and ontamination
of surface layer by carbon and etchant components. Potentiometer studies were
carried out to study the processes that take place on the interface "semiconductor-electrolyte".
A prediction of phase composition of oxide films on Cd1-xZnxTe and Cd1-xMnxTe surfaces
was made and a mechanism of their dissolution was determined. It was found that chemicomechanical
polishing by alkaline colloidal silica compositions is an optimal surface treatment
procedure. Chemico-mechanical polishing with this mixture gives a uniform surface
without essential change of surface stoichiometry and fouling of the surface layer by etchant
Keywords: Cd1-xZnxTe, Cd1-xMnxTe, semiconductor, surface, morphology, etchant.
Paper received 24.11.03; accepted for publication 30.03.04.
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