Optical recording of information pits in thin layers
of chalcogenide semiconductors
A.N. Morozovska*, S.A. Kostyukevych**, L.L. Nikitenko, A.A. Kryuchin***,
A.A. Kudryavtsev, P.E. Shepeliavyi, N.L. Moskalenko
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, pr. Nauky, 03028 Kyiv, Ukraine
*** Institute for Information Recording, NAS of Ukraine, 2, Shpak street, 03113 Kyiv, Ukraine
Abstract. The paper is devoted to the theoretical consideration of the question how to record
pits with the necessary height profile in photosensitive materials by varying their heat conductivity,
photosensitivity, optical absorption, as well as the recording gaussian beam intensity,
radius and exposure time. A rather simple analytical expression for the height profile of
pits has been derived. It has been shown that this profile depending on photosensitive material
parameters and recording beam characteristics could be almost rectangular, flat with
rounding edges, spherical or parabolic. The proposed model describes adequately the height
profile of pits recorded in thin layer chalcogenide semiconductors by a gaussian laser beam.
Keywords: gaussian beam, information pit shape, chalcogenide semiconductor.
Paper received 10.02.04; accepted for publication 30.03.04.
Download full text in PDF [PDF 3882K]