Fabrication and characterization of ONO and tunnel
oxide for 16k FLOTOX EEPROM cell
U. Hashim1, R.M. Ayub2 and K.S. On3
1School of Microelectronics Engineering, Northern Malaysia University College of Engineering,
Kubang Gajah 02600 Arau, Perlis, Malaysia, E-mail: firstname.lastname@example.org
2NVM Research Group, MIMOS Semiconductor, MIMOS Berhad,
Technology Park Malaysia, 57000 Kuala Lumpur, Malaysia
3Wafer Process Technology Group, Malaysia Microelectronic Solution Sdn Bhd
Suite S01, 2nd Floor, 2300 Century Square, 63000 Cyberjaya, Selangor, Malaysia
Abstract. The EEPROM process is one the hardest process to be developed. The performance of
the EEPROM devices is normally judged on the programming speed, which relates to program
high (erase) and program low (write) operations. It is essential that the program high
and program low speed of the EEPROM cell is within 1ms with a programming voltage of not
more than 16V. In this study, two experiments were setup to improve the programming speed.
The first experiment was to increase the high voltage NMOS drain junction breakdown voltage
with the source floating (HVNMOS BVDSF), and the second experiment was to scale down
the ONO layer. The characterization work to increase the programming speed of the memory
cell of 16k FLOTOX EEPROM has been carried out. P-field implant dose is optimized to have
both the HVNMOS BVDSF and the p-field threshold voltage above 16V for fast programming.
As a result, the threshold voltages of programming high and low operation are achieved at
4.35V and -0.77V respectively. Furthermore, by scaling down the nitride layer of ONO from
160A to 130A, the Vt program window is further improved to 4.5V and -0.94V for the program
high and program low operations respectively.
Keywords: EEPROM, memory cell, threshold voltage, program high, program low, ONO,
Paper received 01.08.03; accepted for publication 30.03.04.
Download full text in PDF [PDF 591K]