Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 1. P. 001-005.
https://doi.org/10.15407/spqeo8.01.001

The local atomic structures in Si1–xGex and Si1–xSnx random solid solutions
V.G. Deibuk1, Yu.G. Korolyuk2

1Chernivtsi National University, 2, Kotsiubynskyi str., 58012 Chernivtsi, Ukraine E-mail: vdei@chnu.cv.ua
2Chernivtsi Commercial-Economics Institute, 7, Central Square, 58000 Chernivtsi, Ukraine E-mail: ykor@cv.ukrtel.net

Abstract. Using molecular-dynamics method based on three-particle Tersoff’s potential simulation we have studied the Si1-xGex and Si1-xSnx random solid solutions. Bond lengths and strain energies of these alloys can be predicted. The calculated results are compared with those obtained from other theoretical calculations and experimental measurements.

Keywords: Tersoff’s potential, first-neighbor bond lengths, second-neighbor bond lengths, Vegard’s law.

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