Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 1. P. 025-029.
Momentum relaxation of hot electrons
during radiative intraband indirect transitions in ZnS:Cr
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine
Abstract. A structureless emission in the visible region was revealed in ZnS:Cr thin-film
electroluminescent structures (TFELS) apart the main near-infrared emission resulted
from the 5
E → 5
T2 transition in the 3d shell of the Cr2+ ion. This emission stems from
intraband indirect transitions of hot electrons. The comparison between experimental
intensity spectral dependence and the same dependence calculated for different
mechanisms of the momentum relaxation shows that the scattering on charged impurities
takes place during this emission. The Cr+
ions existing in ZnS:Cr in addition to
predominant Cr2+ ions serve as scattering charge centers. This is confirmed by study of
the magnetic field (H) effect on the intensity (I) of the hot electron emission at 4.2 K.
The experimental dependence I(H) coincides with the calculated magnetic field
dependence of the exchange scattering cross-section of Cr+
ion with the spin 5/2 and gfactor 2. This result also indicates that both the Coulomb interaction with Cr+ ions and the
exchange scattering on them present during the hot electron emission in the ZnS:Cr
TFELS.
Keywords: hot electrons, electroluminescence, thin films, ZnS:Cr, momentum
relaxation, charge impurities, exchange scattering, Cr+
ions.
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