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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 1. P. 060-063.
The nature of red emission in porous silicon
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine
Phone: +38 044 525 72 34; Fax: +38 044 525 83 42
E-mail: khomen@ukr.net
Abstract. The photoluminescence spectra of porous silicon at 77 and 300 K and their
transformation during aging were investigated. The competition of two radiative
recombination channels that have a common excitation mechanism was observed. It is
shown that only one of them, which causes infrared emission band and is present in asprepared samples, is connected with excitonic recombination in Si nanocrystals. The
second one that causes red emission band appears during aging is supposed to be
connected with carrier recombination through oxide-related defects. It is shown that this
channel dominates in aged samples.
Keywords: porous silicon, photoluminescence, recombination.
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