Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 1. P. 072-078.
https://doi.org/10.15407/spqeo8.01.072


Experimental study and theoretical analysis of photoelectric characteristics of AlxGa1–xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces
N.L. Dmitruk, O.Yu. Borkovskaya, V.P. Kostylyov, A.V. Sachenko, I.O. Sokolovskiy

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45, prospect Nauky, 03028 Kiyv, Ukraine

Abstract. We studied experimentally the photoelectric characteristics of the AlxGa1-xAs–p-GaAs–n-GaAs structures with relief interfaces. A theoretical analysis of spectral dependences of internal quantum efficiency of short-circuit current in the above solar cells (SC) was performed. In particular, the low-energy spectral region (where absorption is weak) was considered. A comparison was made between the experimental and theoretical photocurrent spectral curves. From it, we determined a number of parameters of the AlxGa1–xAs and GaAs р-layers, as well as of the n-GaAs layers. Some recommendations concerning the ways to increase photocurrent and extend photosensitivity spectral region were developed for technologists. A theoretical analysis of a “spotty” model for open-circuit voltage formation in relief AlxGa1–xAs–р-GaAs– n-GaAs-based SC was made. This model enables one to give a qualitative explanation for decrease of open-circuit voltage in relief SC as compared to the case of flat interface.

Keywords: AlxGa1–xAs–GaAs heterojunctions, solar cells, interface relief, photoelectric

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