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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 1. P. 072-078.
Experimental study and theoretical analysis of photoelectric
characteristics of AlxGa1–xAs–p-GaAs–n-GaAs-based
photoconverters with relief interfaces
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45, prospect Nauky, 03028 Kiyv, Ukraine
Abstract. We studied experimentally the photoelectric characteristics of the
AlxGa1-xAs–p-GaAs–n-GaAs structures with relief interfaces. A theoretical analysis of
spectral dependences of internal quantum efficiency of short-circuit current in the above
solar cells (SC) was performed. In particular, the low-energy spectral region (where
absorption is weak) was considered. A comparison was made between the experimental
and theoretical photocurrent spectral curves. From it, we determined a number of
parameters of the AlxGa1–xAs and GaAs р-layers, as well as of the n-GaAs layers. Some
recommendations concerning the ways to increase photocurrent and extend
photosensitivity spectral region were developed for technologists. A theoretical analysis
of a “spotty” model for open-circuit voltage formation in relief AlxGa1–xAs–р-GaAs–
n-GaAs-based SC was made. This model enables one to give a qualitative explanation
for decrease of open-circuit voltage in relief SC as compared to the case of flat interface.
Keywords: AlxGa1–xAs–GaAs heterojunctions, solar cells, interface relief, photoelectric
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