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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 1. P. 079-082.
hotoconverters with microrelief p-n junction on a basis of
p-AlxGa1-xAs – p-GaAs – n-GaAs – n+-GaAs heterojunction
Physical-and-Technical Institute of the Scientific Association "Physics-Sun" of the Academy of Sciences of the Republic
of Uzbekistan, 2b, Mavlanova Str., 700084 Tashkent
Phone: 998-71-1331271, fax 998-71-1354291
Abstract. Given in this work are the results of studying the process of creation of diffusion
and epitaxial layers in microrelief structures. It has been shown that photoconverting
structures with a microrelief interface were different in their efficiency under the used level
of the illumination intensity.
Keywords: photoconverter, microrelief, p-n junction, buffer layer, epitaxy.
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