Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 1. P. 090-094.
https://doi.org/10.15407/spqeo8.01.090

Modification of electroluminescence and charge trapping in germanium implanted metal-oxide silicon light-emitting diodes with plasma treatment
A.N. Nazarov,2 W. Skorupa,1 Ja.N. Vovk,2 I.N. Osiyuk,2 A.S. Tkachenko,2 I.P. Tyagulskii,2 V.S. Lysenko,2 T. Gebel,3 L. Rebohle,3 R.A. Yankov,3 T.M. Nazarova4

1Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf e.V., POB 510119, D-01314 Dresden, Germany
2Institute of Semiconductor Physics, NAS of Ukraine, 45, prospekt Nauky, 03028 Kyiv, Ukraine
3Nanoparc GmbH, 45, Bautzner Landstrasse, D-01454 Dresden, Germany
4National Technical University “KPI”, 37, prospekt Peremogy, 03056 Kyiv, Ukraine

Abstract. We have studied the effect of plasma treatment on both the electroluminescent (EL) properties of Ge-implanted light-emitting metal-oxide silicon (MOS) devices and the charge trapping processes occurring therein. Under optimum conditions of plasma treatment, an appreciable increase in the device lifetime has been observed while maintaining the intensity of the light emission unchanged in the violet range of the spectrum. These phenomena are believed to be associated with recovery of the oxide network resulting from a relief of internal mechanical stresses and bond rearrangement that leads to a decrease in the generation efficiency of electron traps which are responsible for the device degradation.

Keywords: electroluminescence, nanoclusters, MOS structure.

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