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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 1. P. 110-113.
Cd1–xZnxTe high-resistive single crystals growth
from a vapor phase
1Chernivtsi National University, 2, Kotsyubinsky str., 58012 Chernivtsi, Ukraine
E-mail: feychuk@chnu.cv.ua
Abstract. AnA modified vapor phase growth method to obtain high-resistive Cd1-xZnxTe single crystals (0 < x < 0.13) is presented. The single crystals (about 25 cm–3 in size) with natural faceting were grown by vapor transport in silica ampoules with a special shape using a polycrystalline ingot as initial source material. It is shown that minimization of plastic deformation effect in preparation of the most structurally perfect crystals is possible by a way of heat removal from the crystallization front by radiation. The growth of high-resistive material required careful preparation of the initial charge with close to stoichiometric composition. The obtained crystals were successfully tested for creating the room temperature X-ray and gamma-ray detectors. Keywords: CdTe, Cd1–xZnxTe, vapor crystal growth, high resistivity, gamma-ray detectors.
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