Semiconductor Physics, Quantum Electronics and Optoelectronics, 9 (1) P. 014-021 (2006).
DOI:
https://doi.org/10.15407/spqeo9.01.014
References
1. M.E. Lines and A.M. Glass, Principles and applications of ferroelectrics and related phenomena. University Press, Oxford (1978). | | 2. S.B. Lang, Pyroelectricity: from ancient curiosity to modern imaging tool // Physics Today, 58(8), p. 31- 36 (2005). https://doi.org/10.1063/1.2062916 | | 3. L.E. Cross, Ferroelectric ceramics: Tailoring properties for specific application. Birkhauser Verlag, Basel (1993). | | 4. J.F. Scott, Ferroelectric memories. Springer, Berlin and Heidelberg (2000) https://doi.org/10.1007/978-3-662-04307-3 | | 5. V.M. Fridkin, Ferroelectrics semiconductors. Consultant Bureau, New-York and London (1980). | | 6. V.B. Sandomirskii, Sh.S. Khalilov, E.V. Chenskii, pn junction in ferroelectric semiconductor // Physics and technics of semiconductors 16, p. 440 (1982). | | 7. B. Meyer and D. Vanderbilt, Ab initio study of BaTiO3 and PbTiO3 surfaces in external electric field // Phys. Rev. B 63, p. 205426-10, (2001). https://doi.org/10.1103/PhysRevB.63.205426 | | 8. K.T. Li and V.Ch. Lo, Simulation of oxygen vacancy induced phenomena in ferroelectric thin films // J. Appl. Phys. 97, 034107-8 (2005). https://doi.org/10.1063/1.1846947 | | 9. A. Sharma, Z.-G. Ban, and S.P. Alpay, Pyroelectric response of ferroelectric thin films // J. Appl. Phys. 95, p. 3618-3625 (2004). https://doi.org/10.1063/1.1649460 | | 10. A.M. Bratkovsky and A.P. Levanyuk, Smearing of phase transition due to a surface effect or a bulk inhomogeneity in ferroelectric nanostructures // Phys. Rev. Lett. 94, 107601-4 (2005). https://doi.org/10.1103/PhysRevLett.94.107601 | | 11. V.Ch. Lo, Simulation of thickness effect in thin ferroelectric films using Landau-Khalatnikov theory // J. Appl. Phys. 94, p. 3353-3359 (2003). https://doi.org/10.1063/1.1598275 | | 12. A. Gordon, S. Dorfman, D. Fuks, Temperatureinduced motion of interphase boundaries in confined ferroelectrics // Philosophical Magazine B, 82, p. 63- 71 (2002). https://doi.org/10.1080/13642810208211216 | | 13. B. Jaffe, W.R. Cook and H. Jaffe, Piezoelectric ceramics. Academic Press, London and New York (1971). https://doi.org/10.1016/B978-0-12-379550-2.50015-6 | | 14. L.E. Cross, Relaxor ferroelectrics // Ferroelectrics 76, p. 241-245 (1987). https://doi.org/10.1080/00150198708016945 | | 15. Y. Gao, K. Uchino, D. Viehland, Effects of rare earth metal substituents on the piezoelectric and polarization properties of Pb(Zr, Ti)O3 - Pb(Sb, Mn)O3 ceramics // J. Appl. Phys. 92, p. 2094-2099 (2002). https://doi.org/10.1063/1.1490617 | | 16. T. Tamura, K. Matsuura, H. Ashida, K. Konda, S. Otani, Hysteresis variations of (Pb,La)(Zr,Ti)O3 capacitors baked in a hydrogen atmosphere // Appl. Phys. Lett. 74, p. 3395-397 (1999). https://doi.org/10.1063/1.123356 | | 17. T. Haccart, E. Cattan, D. Remiens, Dielectric, ferroelectric and piezoelectric properties of sputtered PZT thin films on Si substrates: influence of film thickness and orientation // Semiconductor Physics, Quantum Electronics & Optoelectronics, 5 (1), p. 78- 88 (2002). | | 18. L. Baudry, Tournier, Model for ferroelectric semiconductors thin films accounting for the space varying permittivity // J. Appl. Phys. 97, 024104-11 (2005). https://doi.org/10.1063/1.1834728 | | 19. A.N. Morozovska, E.A. Eliseev, E. Cattan, D. Remien, Partial polarization switching in ferroelectrics-semiconductors with charged defects // Semiconductor Physics, Quantum Electronics & Optoelectronics 7, p. 251-262 (2004). | | 20. A.N. Morozovska and E.A. Eliseev, Modelling of dielectric hysteresis loops in ferroelectric semiconductors with charged defects // J. Phys.: Condens. Matter. 16, p. 8937-8956 (2004); E-print http://arXiv.org/cond-mat/0408647. https://doi.org/10.1088/0953-8984/16/49/010 | | 21. A.N. Morozovska, E.A. Eliseev, Phenomenological description of coercive field decrease in ferroelectric semiconductors with charged inhomogeneities // Physica B 355 p. 236-243 (2005). https://doi.org/10.1016/j.physb.2004.10.097 | | 22. A.N. Morozovska and E.A. Eliseev, Phenomenological description of polarization switching in ferroelectric semiconductors with charged defects // Phys. status solidi (b) 242, p. 947-961 (2005). https://doi.org/10.1002/pssb.200402107 | | 23. A.N. Morozovska, Theoretical description of coercive field decrease in ferroelectricssemiconductors with charged defects // Ferroelectrics 317, p. 37-42 (2005). https://doi.org/10.1080/00150190590963390 | | 24. B.I. Shklovskii and A.L. Efros, Electronic properties of doped semiconductors. Berlin, Springer (1984). https://doi.org/10.1007/978-3-662-02403-4 | | 25. A.Y. Shik, Electronic Properties of inhomogeneous semiconductors. New-York, Gordon & Breach (1995). | | 26. Contreras J. Rodrigues, H. Kohlstedt, U. Poppe, R. Waser, Ch. Buchal, Surface treatment effects on the thickness dependence of the remanent polarization of PbZr0.52Ti0.48O3 capacitors // Appl. Phys. Lett. 83, p. 126-128 (2003). https://doi.org/10.1063/1.1590431 | | 27. M. Shimizu, S. Nakashima, K. Kaibara, H. Fujisawa, H. Niu, Effects of film thickness and grain size on the electrical properties of Pb(Zr, Ti)O3 thin films prepared by MOCVD // Ferroelectrics 241, p. 183- 190 (2000). https://doi.org/10.1080/00150190008224990 | | 28. M. Tyunina and J. Levoska, Coexistence of ferroelectric and relaxor properties in epitaxial films of Ba1−xSrxTiO3 // Phys. Rev. B 70, 132105-4 (2004). https://doi.org/10.1103/PhysRevB.70.132105 | | 29. M.D. Glinchuk and A.N. Morozovska, The internal electric field originating from the mismatch effect and its influence on ferroelectric thin film properties // J. Phys.: Condens. Matter. 16, p. 3517-3531 (2004). https://doi.org/10.1088/0953-8984/16/21/002 | | 30. S.L. Bravina, E. Cattan, N.V. Morozovsky, D. Remiens, Peculiarities and asymmetry of polarization reversal in Pt/PZT-film/Pt:Ti/SiO2/Sisubstrate structures in pyroelectric response investigations // Semiconductor Physics, Quantum Electronics & Optoelectronics 7, p. 263-271 (2004). | | 31. E.G. Kostsov, Ferroelectric barium-strontium niobate films and multilayer structures // Ferroelectrics 314, p. 169-187 (2005). https://doi.org/10.1080/00150190590926427 | |
|
|