Semiconductor Physics, Quantum Electronics and Optoelectronics, 9 (1) P. 029-031 (2006).
DOI: https://doi.org/10.15407/spqeo9.01.029


References

1. I.S. Virt, N.N. Grigoryev, A.V. Lyubchenko et al. // Poverkhnost'. Fizika, khimia, mekhanika 4, p. 60-63 (1988) (in Russian).
2. I.I. Izhnin, Temperature stability of the IBM formed CdHgTe p-n structure // Proc. SPIE 3890, p. 519-522 (1998).
3. J. Schmit, Intrinsic carrier concentration of Hg1-xCdxTe as a function of x and T // J. Appl. Phys. 41, No 7, p. 2876-2879 (1970).
https://doi.org/10.1063/1.1659330
4. O.A. Bodnaruk, A.V. Markov, S.E. Ostapov, I.M. Rarenko, A.F. Slonetski, Bandgap and intrinsic carrier concentration in HgCdMnTe and HgCdZnTe // Semiconductors 34, p. 415-417 (2000).
https://doi.org/10.1134/1.1187998
5. N.L. Bazhenov, A.M. Andrukhiv, V.I. IvanovOmskii, Carrier lifetime in ZnCdHgTe: calculation and experiment // Infrared Physics 34, No 4, p. 357- 364 (1993).
https://doi.org/10.1016/0020-0891(93)90066-G
6. A. Rogalski, HgZnTe as a potential infrared detector material // Progr. Quant. Electr. 13, p. 299-353 (1989).
https://doi.org/10.1016/0079-6727(89)90008-6
7. I.M. Nesmelova, Optical properties of narrow-band semiconductors. Nauka, Novosibirsk (1992) (in Russian).
8. I.M. Nesmelova, Effective mass of electrons in MnHgTe // Fizika i Tekhnika Poluprovodnikov 31(11) p. 1296-1297 (2003) (in Russian).