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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2008. V. 11, N 1. P. 001-005.
Photoconversion efficiency of quantum-well solar cells
for the optimum doping level of a base
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine
Abstract. Analytical expressions for the maximum obtainable photoconversion
efficiency of quantum-well solar cells (QWSCs) under AM0 conditions are given. The
modeling of the photoconversion efficiency of QWSCs under AM1.5 conditions using
the SimWindows program is fulfilled. It is shown that the photoconversion efficiency of
QWSCs with the A 3 B 5 p-i-n structure is rather low because of a low photovoltage value.
To improve this situation, the base region should be doped heavily enough. Light
concentration makes it possible to realize high photoconversion efficiencies for A 3 B 5
quantum-well p-i-n structures with a low background level of the base region doping.
Their values are comparable to the photoconversion efficiencies for solar cells (SCs) with
rather high base region doping levels.
Keywords: photoconversion efficiency, quantum well, solar cell.
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