Semiconductor Physics, Quantum Electronics & Optoelectronics. 2008. V. 11, N 1. P. 001-005.


Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base
A.V. Sachenko, I.O. Sokolovskyi

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03028 Kyiv, Ukraine

Abstract. Analytical expressions for the maximum obtainable photoconversion efficiency of quantum-well solar cells (QWSCs) under AM0 conditions are given. The modeling of the photoconversion efficiency of QWSCs under AM1.5 conditions using the SimWindows program is fulfilled. It is shown that the photoconversion efficiency of QWSCs with the A 3 B 5 p-i-n structure is rather low because of a low photovoltage value. To improve this situation, the base region should be doped heavily enough. Light concentration makes it possible to realize high photoconversion efficiencies for A 3 B 5 quantum-well p-i-n structures with a low background level of the base region doping. Their values are comparable to the photoconversion efficiencies for solar cells (SCs) with rather high base region doping levels.

Keywords: photoconversion efficiency, quantum well, solar cell.

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