Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 1. P. 008-011.


The features of temperature dependence of contact resistivity of Au-Ti-Pd2Si-p+-Si ohmic contacts
A.E. Belyaev1, N.S. Boltovets2, L.M. Kapitanchuk3, R.V. Konakova1, V.P. Kladko1, Ya.Ya. Kudryk1, A.V. Kuchuk1, O.S. Lytvyn1, V.V. Milenin1, T.V. Korostinskaya2, A.B. Ataubaeva4, P.V. Nevolin1

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03028 Kyiv, Ukraine, e-mail: konakova@isp.kiev.ua
2State Enterprise Research Institute “Orion”, 8a, Eugene Pottier str., 03057 Kyiv, Ukraine E-mail: bms@i.kiev.ua
3E.O. Paton Electric Welding Institute, NAS of Ukraine, Kyiv, Ukraine
4Berdakh Karakalpak State University, Nukus, Republic of Uzbekistan

Abstract. We consider the features of formation of AuTiPd ohmic contacts to p + -Si. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 С. It is shown that the contact resistivity increases with temperature; this is typical of metallic conductivity. We suggest that the ohmic contact is formed owing to appearance of shunts at Pd deposition on dislocations or other structural defects. The number of shunts per unit area is close to the measured density of structural defects at the metalSi interface.

Keywords: ohmic contact, contact resistivity, metallic shunt, palladium, palladium disilicide, р+ -Si.

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