|
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 1. P. 051-057.
Electron-hole Fermi liquid in nanosized semiconductor structures
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine; e-mail: lvg@isp.kiev.ua
Abstract. The experimental and theoretical results on the quantum-sized electron-hole
liquid plasma (EHLP) in semiconductors and analysis of the difference of it in
comparison to the bulk one have been presented. The non-equilibrium Fermi EHLP can
be created in the bulk and layered structures (insulator-semiconductor interfaces, thin
films, quantum superlattices, etc.) at low temperatures and powerful laser radiation. In
the quantum-sized structures, however, these phenomena appear at much higher
temperatures, up to the room ones. The peculiarities of EHLP phenomena are:
(1) appearance the very broad luminescence line in the low-energy side of its spectrum,
which have constant width and energy position under variation of the light intensity as
well as narrowing peak when increasing the temperature; (2) appearance of stimulated
radiation with a relatively low excitation threshold (the so-called “surface laser effect”);
(3) planar ballistic expansion of electron-hole plasma over long distances; (4) predicted
effect of transformation of non-equilibrium 2D plasmons into radiative modes.
Keywords: electron-hole plasma, quantum-sized structures, luminescence.
| ||