Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 1. P. 061-064.


Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties
V.I. Bilozertseva1, H.M. Khlyap2,3, P.S. Shkumbatyuk3, N.L. Dyakonenko1, A.O. Mamaluy1, D.O. Gaman1

1National Technical University “KPI”, 21, Frunze str., 61002 Kharkov, Ukraine, Phone: 0-(57)-7076347, fax: 0-(57)-7076601, e-mail: biloz@mail.ru
2University of Technology, Fachbereich Physik, E.-Schrödinger –Str. 56, D-67663, Kaiserslautern, Germany,
3State Pedagogical University, 24, Franko str., 82100 Drohobych, Ukraine, e-mail: hkhlyap@yahoo.com

Abstract. The results of structural investigations and electric field-induced properties of thin (40–100 nm) Li-Bi-Se films grown on glass substrates by means of the resistive evaporation technique are reported. The experimental investigations of microstructure and phase composition of thin films by transmission electron microscopy (TEM) and electron diffraction methods are carried out. Тhe experimental current-voltage dependences and transport of charge carriers are discussed.

Keywords: thin film, Li-Bi-Se, structure, electron diffraction, electrical properties.

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