Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 1. P. 074-078.


Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing
V.A. Smyntyna and O.V. Sviridova

I.I. Mechnikov Odessa National University, 42, Paster str., 65082 Odessa, Ukraine Corresponding author e-mail: sviridova@onu.edu.ua

Abstract. The type, density, and distribution of defects in initial and oxidated monocrystalline silicon wafers were studied by modern methods. It was established that disordered silicon and stacking faults are basic defects in near-surface layers of oxidated monocrystalline silicon. It was shown that stacking faults are generated during the oxidation process, and the mechanism of their formation is connected with the defective layered structure of initial silicon wafers. It was established that defects of layered heterogeneity, on the one hand, lead to the formation of stacking faults and, on the other hand, prevent their propagation to the wafer bulk.

Keywords: layered heterogeneity, stacking fault, dendrites, swirl defects, dislocations.

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