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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 1. P. 074-078.
Genesis of initial defects in the process
of monocrystalline silicon oxidation with subsequent scribing
I.I. Mechnikov Odessa National University,
42, Paster str., 65082 Odessa, Ukraine
Corresponding author e-mail: sviridova@onu.edu.ua
Abstract. The type, density, and distribution of defects in initial and oxidated
monocrystalline silicon wafers were studied by modern methods. It was established that
disordered silicon and stacking faults are basic defects in near-surface layers of oxidated
monocrystalline silicon. It was shown that stacking faults are generated during the
oxidation process, and the mechanism of their formation is connected with the defective
layered structure of initial silicon wafers. It was established that defects of layered
heterogeneity, on the one hand, lead to the formation of stacking faults and, on the other
hand, prevent their propagation to the wafer bulk.
Keywords: layered heterogeneity, stacking fault, dendrites, swirl defects, dislocations.
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